An analytical model of the silicon on insulator photoactivated modulator (SOI-PAM) device is presented in order to describe\nthe concept of this novel device in which the information is electronic while the modulation command is optical. The model,\nrelying on the classic Shockleyââ?¬â?¢s analysis, is simple and useful for analyzing and synthesizing the voltage-current relations of\nthe device at low drain voltage. Analytical expressions were derived for the output current as function of the input drain and\ngate voltages with a parameterization of the physical values such as the doping concentrations, channel and oxide thicknesses,\nand the optical control energy. A prototype SOI-PAM device having an area of 4 Ã?µm Ã?â?? 3 Ã?µm with known parameters is used to\nexperimentally validate and support the model. Finally, the model allows the understanding of the physical mechanisms inside the\ndevice for both dark and under illumination conditions, and it will be used to optimize and to find the performance limits of the\ndevice.
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